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| 1SS404WS SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Applications * High speed switching PINNING PIN 1 2 DESCRIPTION Cathode Anode 2 1 R9 Top View Marking Code: "R9" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Maximum (Peak) Reverse Voltage Reverse Voltage Average Forward Current Maximum (Peak) Forward Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VRM VR IO IFM Ptot TJ Ts Value 25 20 300 700 200 125 - 55 to + 125 Unit V V mA mA mW O C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 300 mA Reverse Current at VR = 20 V Total Capacitance at f = 1 MHz Symbol VF IR CT Typ. 46 Max. 0.45 50 Unit V A pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 01/09/2006 1SS404WS SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 01/09/2006 1SS404WS PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 A c HE D A E bp UNIT mm A 1.10 0.80 bp 0.40 0.25 C 0.15 0.00 D 1.80 1.60 E 1.35 1.15 HE 2.80 2.30 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 01/09/2006 |
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